Title :
Doping-dependent mobility analysis of junction field-effect transistors
Author :
Ramanan, K.V. ; Gupta, R.K.
Author_Institution :
Birla Institute of Technology and Science, Department of Electrical & Electronic Engineering, Pilani, India
Abstract :
An analysis of a junction field-effect transistor, taking into account the doping-dependent mobility, is presented for an assumed arbitrary impurity distribution in the channel. The values of transconductance and drain current obtained from the new relationships are found to deviate considerably from the theoretical values of these parameters estimated from the existing relationships.
Keywords :
electron mobility; field effect transistors; semiconductor doping; arbitrary impurity distribution; doping dependence electron mobility; drain current; junction field effect transistor; semiconductor doping; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710150
