DocumentCode
913618
Title
An Empirical Model for the Threshold Voltage of Enhancement NMOSFET´s
Author
Park, Hong-June ; Kim, Choong-Ki
Author_Institution
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA
Volume
4
Issue
4
fYear
1985
fDate
10/1/1985 12:00:00 AM
Firstpage
629
Lastpage
635
Abstract
A new empirical model for the threshold voltage of enhancement NMOSFET is proposed based on experimental observations. This model covers both short and narrow channel effects. The model equation is formulated by the superposition of these two effects, and extraction of model parameters is presented. Comparison of the model with experimentally measured values shows good agreement for transistors with effective channel length down to 1.8 μm and effective channel width down to 1.0 μm.
Keywords
Channel bank filters; Circuit simulation; Doping; Electrodes; Equations; Length measurement; MOSFET circuits; SPICE; Substrates; Threshold voltage;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.1985.1270163
Filename
1270163
Link To Document