Title :
1.57 mu m strained-layer quantum-well GaInAlAs ridge-waveguide laser diodes with high temperature (130 degrees C) and ultrahigh-speed (17 GHz) performance
Author :
Stegmüller, B. ; Borchert, B. ; Gessner, R.
Author_Institution :
Siemens AG, Munich, Germany
fDate :
6/1/1993 12:00:00 AM
Abstract :
The fabrication of GaInAlAs strained-layer (SL) multiple-quantum-well (MQW) ridge-waveguide (RW) laser diodes emitting at 1.57 mu m is discussed. Due to an optimized layer structure, a very high characteristic temperature of 90 K was obtained. As a consequence for episide-up mounted devices, the maximum continuous wave (CW)-operation temperature is 130 degrees C. At room temperature, a maximum output power of 47 mW was measured for 600- mu m-long lasers with one high-reflection coated facet. The low series resistance of 4 Omega (2 Omega ) for 200- mu m-(400- mu m)-long devices yields an ultrahigh 3-dB bandwidth of 17 GHz. These static and dynamic properties also result from a high internal quantum-efficiency of 0.83 and a high differential gain of 5.5*10/sup -15/ cm/sup 2/.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; optical waveguides; optical workshop techniques; semiconductor lasers; 1.57 micron; 130 degC; 17 GHz; 2 ohm; 200 micron; 298 K; 4 ohm; 400 micron; 600 micron; CW operation; GaInAlAs; dynamic properties; fabrication; high temperature performance; internal quantum-efficiency; multiple-quantum-well lasers; optimized layer structure; ridge-waveguide laser diodes; room temperature; semiconductors; static properties; strained-layer lasers; ultrahigh-speed performance; Diode lasers; Electrical resistance measurement; Optical device fabrication; Power generation; Power lasers; Power measurement; Quantum well devices; Quantum well lasers; Quantum wells; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
