Title :
Experiments on heat sinking of semiconductor devices
Author :
Fallmann, W. ; Hartnagel, H.L. ; Mathur, P.C.
Author_Institution :
University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
Abstract :
A planar GaAs structure has been used to measure the properties of good heatsinks of c.w. devices. It is found, first, that the thermal resistance is primarily given by the thermal conductivity k of GaAs if the temperature dependence of k is included, and, secondly, that the contribution of the semiconductor-metal interface is negligible.
Keywords :
heat sinks; resistance (electric); semiconductor devices; conductivity; heatsinks; planar GaAs structure; semiconductor devices; semiconductor metal interfaces; thermal resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710347
