Title :
Proposal of novel gain-levered MQW DFB laser with high and red-shifted FM response
Author :
Olesen, Henning ; Shim, Jong-In ; Yamaguchi, Masayuki ; Kitamura, Mitsuhiro
Author_Institution :
NEC Corp., Tsukuba, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
A gain-levered multiple quantum well (MQW) distributed feedback (DFB) laser with high FM efficiency is discussed. The device consists of three sections with different bandgap energy. It can be fabricated by a selective area metalorganic vapor phase epitaxy (MOVPE) growth technique. Numerical analysis shows that a flat, red-shifted, and high FM efficiency of above 1 GHz/mA at 20-mW output power can be realized using the gain levering scheme.<>
Keywords :
chemical vapour deposition; distributed feedback lasers; optical workshop techniques; semiconductor lasers; vapour phase epitaxial growth; 20 mW; bandgap energy; fabrication; gain levering scheme; gain-levered MQW DFB laser; performance; red-shifted FM response; selective area metalorganic vapor phase epitaxy; semiconductor lasers; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Laser feedback; Numerical analysis; Photonic band gap; Power generation; Proposals; Quantum well devices; Quantum well lasers;
Journal_Title :
Photonics Technology Letters, IEEE
