Dependence of differential quantum efficiency on the confinement structure in InGaAs/InGaAsP strained-layer multiple quantum-well lasers

Author

Tanaka, Kazuhiro ; Wakao, Kiyohide ; Yamamoto, Tsuyoshi ; Nobuhara, Hiroyuki ; Fuji, Takuya

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

Volume

5

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

602

Lastpage

605

Abstract

An internal efficiency of 91% was obtained with In/sub 0.7/Ga/sub 0.3/As/InGaAsP strained-layer multiple quantum well (MQW) lasers emitting at a wavelength of 1.5 mu m. The dependence of the reciprocal differential quantum efficiency on the length of the laser cavity shows that the absorption loss in the InGaAsP ( lambda =1.3 mu m) confinement layer caused by carrier overflowing into the confinement layer reduces the internal efficiency.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; optical losses; quantum optics; semiconductor lasers; 1.3 micron; 1.5 micron; InGaAs-InGaAsP; absorption loss; carrier overflow; confinement layer; confinement structure; differential quantum efficiency; internal efficiency; laser cavity; semiconductors; strained-layer multiple quantum-well lasers; Distributed feedback devices; Electrons; Frequency modulation; Frequency shift keying; Indium gallium arsenide; Laser feedback; Power generation; Quantum well devices; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.219682

Filename

219682