DocumentCode :
913926
Title :
High-Power 50-GHz Double-Drift-Region IMPATT Oscillators with Improved Bias Circuits for Eliminating Low-Frequency Instabilities
Author :
Hirachi, Yasutake ; Nakagami, Takakiyo ; Toyama, Yoshikazu ; Fukukawa, Yukio
Volume :
24
Issue :
11
fYear :
1976
fDate :
11/1/1976 12:00:00 AM
Firstpage :
731
Lastpage :
737
Abstract :
Low-frequency instabilities in millimeter-wave double-drift-region (DDR) IMPATT diodes are investigated and new oscillator circuits with the improved bias circuits for eliminating the low-frequency instability are developed. DDR IMPATT diodes mounted in these circuits exhibited a maximum free-running oscillation power of 1.6 W at 55.5 GHz with 11.5-percent conversion efficiency. A highly stabilized oscillator was also constructed with the maximum output power of 1 W and the frequency stabflity 0.3 ppm/mA at 51.86 GHz.
Keywords :
Diodes; Helium; Impedance; Ionization; Low-frequency noise; Oscillators; Power generation; Radio frequency; Solid state circuits; Voltage;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1976.1128953
Filename :
1128953
Link To Document :
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