Correlational Study Between SiN Etch Rate and Plasma Impedance in Electron Cyclotron Resonance Plasma Etcher for Advanced Process Control

Author

Ohmori, Takeshi ; Kashibe, Makoto ; Une, Satoshi ; Yamamoto, Koichi ; Shiraishi, Daisuke ; Inoue, Satomi

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

28

Issue

3

fYear

2015

fDate

Aug. 2015

Firstpage

236

Lastpage

240

Abstract

The correlation between the change in the etching rate of SiN and the change in the monitored plasma impedance was investigated to estimate the capability of critical dimension (CD) prediction with a plasma impedance monitor (PIM). The results obtained with the PIM were compared with those of optical emission spectroscopy (OES), which was performed using the emission intensity ratio of C2/H, and showed that the SiN etching rate is strongly correlated with several values obtained with the PIM. We conclude that the PIM has the potential to predict CDs with the same accuracy as that of OES.

Keywords

cyclotrons; process control; semiconductor device manufacture; silicon compounds; sputter etching; CD prediction; OES; PIM; SiN; advanced process control; critical dimension prediction; electron cyclotron resonance plasma etcher; monitored plasma impedance; optical emission spectroscopy; plasma impedance; plasma impedance monitor; Correlation; Erbium; Etching; Harmonic analysis; Plasmas; Silicon compounds; Sulfur hexafluoride; Plasma etching; advanced process control (APC); harmonics analysis of bias waveform; optical emission spectroscopy (OES); plasma impedance monitor (PIM);

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2015.2455051

Filename

7154513