Low-voltage-tunable distributed Bragg reflector using InGaAs/GaAs quantum wells

Author

Blum, O. ; Zucker, J.E. ; Wu, X. ; Gulden, K.H. ; Sohn, H. ; Gustafson, T.K. ; Smith, J.S.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

5

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

695

Lastpage

697

Abstract

The operation of the first multiple quantum well (MQW) voltage-tunable distributed Bragg reflector (DBR) with inter-digitated contacts is discussed. Application of only +1 V produces a 12% change in reflectivity, demonstrating the advantages of the interdigitated contact scheme. Qualitative features of the optical response are successfully modeled using the transmission matrix method and absorption and refractive index spectra deduced from transmission measurements of a InGaAs/GaAs quantum-well control sample.<>

Keywords

III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; integrated optics; mirrors; reflectivity; tuning; DBR; DBR lasers; InGaAs-GaAs; SQW; absorption spectra; distributed Bragg reflector; inter-digitated contacts; multiple quantum well; optical response; reflectivity; refractive index spectra; semiconductor quantum wells; transmission matrix method; voltage-tunable; Absorption; Distributed Bragg reflectors; Gallium arsenide; Indium gallium arsenide; Optical refraction; Optical variables control; Quantum well devices; Reflectivity; Refractive index; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.219714

Filename

219714