A Two-Dimensional Etching Profile Simulator: ESPRIT

Author

Yamamoto, Shuichi ; Kure, Tokuo ; Ohgo, Masanori ; Matsuzawa, T. ; Tachi, Shin´Ichi ; Sunami, Hideo

Author_Institution

Central Research Laboratory, Hitachi Ltd., Tokyo, Japan

Volume

6

Issue

3

fYear

1987

fDate

5/1/1987 12:00:00 AM

Firstpage

417

Lastpage

422

Abstract

A two-dimensional etching simulator named ESPRIT (FOOTNOTE: ESPRIT--Etching Simulation PRogram with an Improved sTring model.) has been developed to simulate LSI patterning. The etching simulator includes isotropic and anisotropic components. Its calculation method is based on the string model. ESPRIT can simulate etched profiles for multilayers with different etching rates and calculate side etching using sloped incidental anisotropic components. In addition, location correction, loop elimination, point insertion, and point elimination are provided for stable and accurate calculations. Simulated profiles coincide well with those from experiments in terms of relationship between the groove width and etched depth. ESPRIT can support to design LSI patterning process.

Keywords

Ambient intelligence; Anisotropic magnetoresistance; Dry etching; Large scale integration; Nonhomogeneous media; Process design; Semiconductor films; Silicon; Sputter etching; Sun;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/TCAD.1987.1270287

Filename

1270287