Title :
Analysis of MOSFET Capacitances and Their Behavior at Short-Channel Lengths Using an AC Device Simulator
Author :
Ohkura, Yasuyuki ; Toyabe, Toru ; Masuda, Hiroo
Author_Institution :
Central Research Laboratory, Hitachi Ltd., Tokyo, Japan
fDate :
5/1/1987 12:00:00 AM
Abstract :
Intrinsic MOSFET capacitances are calculated using the three-dimensional ac device simulator CADDETH, and distributions of the internal ac currents are studied. The simulations clearly show the influence of velocity saturation. Finally short-channel effects on the intrinsic MOSFET capacitances are analyzed.
Keywords :
Analytical models; Charge carrier processes; Computational modeling; Frequency; Gradient methods; MOSFET circuits; Parasitic capacitance; Poisson equations; Very large scale integration; Voltage;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.1987.1270288
