DocumentCode
914909
Title
Analysis of MOSFET Capacitances and Their Behavior at Short-Channel Lengths Using an AC Device Simulator
Author
Ohkura, Yasuyuki ; Toyabe, Toru ; Masuda, Hiroo
Author_Institution
Central Research Laboratory, Hitachi Ltd., Tokyo, Japan
Volume
6
Issue
3
fYear
1987
fDate
5/1/1987 12:00:00 AM
Firstpage
423
Lastpage
430
Abstract
Intrinsic MOSFET capacitances are calculated using the three-dimensional ac device simulator CADDETH, and distributions of the internal ac currents are studied. The simulations clearly show the influence of velocity saturation. Finally short-channel effects on the intrinsic MOSFET capacitances are analyzed.
Keywords
Analytical models; Charge carrier processes; Computational modeling; Frequency; Gradient methods; MOSFET circuits; Parasitic capacitance; Poisson equations; Very large scale integration; Voltage;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.1987.1270288
Filename
1270288
Link To Document