DocumentCode
915092
Title
Metallic channels formed by high surface fields on GaAs planar devices
Author
Fallman, W.F. ; Hartnagel, H.L.
Author_Institution
University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
Volume
7
Issue
23
fYear
1971
Firstpage
692
Lastpage
693
Abstract
Experimental finding are presented which show, among other results, that material migration also occurs along semi-insulating surfaces for GaAs planar devices.
Keywords
Gunn devices; electrical contacts; resistance (electric); semiconductor materials; surface phenomena; GaAs planar devices; Gunn devices; contacts; high surface fields; material migration; metallic channels; resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19710473
Filename
4235378
Link To Document