Title :
Microwave operation of high power InGaP/GaAs heterojunction bipolar transistors
Author :
Mack, M.P. ; Bayraktaroglu, B. ; Kehias, L. ; Barrette, J. ; Neidhard, R. ; Fitch, R. ; Scherer, Rafal ; West, W.
Author_Institution :
Wright Lab., Wright Patterson AFB, OH, USA
fDate :
6/10/1993 12:00:00 AM
Abstract :
The first high power demonstration of an InGaP/GaAs heterojunction bipolar transistor is presented. Multifinger selfaligned HBTs were tested at 3 GHz. A maximum output power of 2.82 W CW was obtained for a 600 mu m2 emitter area device (4.7 mW/ mu m2 power density) with an attendant gain of 6.92 dB; simultaneously, the device exhibited 55.2% power added efficiency, 69.1% collector efficiency and 8.0*104 A/cm2 emitter current density.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power transistors; solid-state microwave devices; 2.82 W; 3 GHz; 55.2 percent; 69.1 percent; CW output; InGaP-GaAs; collector efficiency; heterojunction bipolar transistors; high power; multifinger selfaligned HBT; power added efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930713
