DocumentCode :
915264
Title :
Contact effects in Gunn diodes
Author :
Gurney, W.S.C.
Author_Institution :
Mullard Research Laboratories, Redhill, UK
Volume :
7
Issue :
24
fYear :
1971
Firstpage :
711
Lastpage :
713
Abstract :
This letter shows how the splitting of the forward and reverse current/voltage curves of a Gunn diode may be interpreted in terms of different models of contact damage, and proposes a simple test technique to obtain a quantitative measure of contact quality. Experimental verification of this technique is presented, showing a correlation between device efficiency and a contact parameter ß.
Keywords :
Gunn diodes; electrical contacts; semiconductor device testing; Gunn diodes; contact effects; donor notch model; mobility notch model; models of contact damage; quantitative measure of contact quality; simple test technique; splitting of forward and reverse current/voltage characteristics;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19710488
Filename :
4235394
Link To Document :
بازگشت