Title :
Comparison of the microwave velocity/field characteristics of n type InP and n type GaAs
Author :
t Lam, H. ; Acket, G.A.
Author_Institution :
Philips Research Laboratories, NV Philips´ Gloeilampenfabrieken, Eindhoven, Netherlands
Abstract :
The velocity/field characteristic of n InP has been determined up to 24 kV/cm using a microwave-heating technique. For comparison, the velocity/field characteristic of n GaAs, measured in the same equipment, is also presented. For both InP and GaAs, the characteristic is compared with an experimental curve, determined from space-charge wave measurements, and with a theoretical curve. Information concerning relaxation effects of InP is obtained.
Keywords :
III-V semiconductors; electrical conductivity of solids; electron mobility; gallium arsenide; indium compounds; microwave devices; microwave measurement; semiconductor materials; N-GaAs; electron mobility; electron transport processes; microwave heating; n-InP; relaxation effects of InP; semiconductor materials; space charge wave measurements; velocity/field characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710495
