High refractive index difference and low loss optical waveguide fabricated by low temperature processes

Author

Imoto, K. ; Hori, A.

Author_Institution

Hitachi Cable Ltd., Ibaraki, Japan

Volume

29

Issue

12

fYear

1993

fDate

6/10/1993 12:00:00 AM

Firstpage

1123

Lastpage

1124

Abstract

A singlemode optical waveguide has been developed with a high refractive index difference Delta of 2% and low loss of 0.12 dB/cm at 1.3 mu m wavelength. This waveguide consists of buffer layer, core ridge, and cladding layer of SiO_xN_yH_z formed by the plasma CVD method at a low temperature of 270 degrees C. The absorption loss which is affected by the OH ion content at 1.39 mu m wavelength can be decreased by annealing at 500 degrees C under N₂ atmosphere. The low temperature fabrication process is effectively used for the monolithic integration of photonic/electronic circuits.

Keywords

annealing; integrated optics; optical losses; optical waveguides; optical workshop techniques; plasma CVD; refractive index; 1.3 micron; 1.39 micron; 270 degC; OH ion content; SiO_xN_yH_z; absorption loss; annealing; buffer layer; cladding layer; core ridge; high refractive index difference; low loss; low temperature processes; mode matching technology; monolithic integration; photonic/electronic circuits; plasma CVD; singlemode optical waveguide;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19930749

Filename

220845