DocumentCode :
915596
Title :
High refractive index difference and low loss optical waveguide fabricated by low temperature processes
Author :
Imoto, K. ; Hori, A.
Author_Institution :
Hitachi Cable Ltd., Ibaraki, Japan
Volume :
29
Issue :
12
fYear :
1993
fDate :
6/10/1993 12:00:00 AM
Firstpage :
1123
Lastpage :
1124
Abstract :
A singlemode optical waveguide has been developed with a high refractive index difference Delta of 2% and low loss of 0.12 dB/cm at 1.3 mu m wavelength. This waveguide consists of buffer layer, core ridge, and cladding layer of SiOxNyHz formed by the plasma CVD method at a low temperature of 270 degrees C. The absorption loss which is affected by the OH ion content at 1.39 mu m wavelength can be decreased by annealing at 500 degrees C under N2 atmosphere. The low temperature fabrication process is effectively used for the monolithic integration of photonic/electronic circuits.
Keywords :
annealing; integrated optics; optical losses; optical waveguides; optical workshop techniques; plasma CVD; refractive index; 1.3 micron; 1.39 micron; 270 degC; OH ion content; SiO xN yH z; absorption loss; annealing; buffer layer; cladding layer; core ridge; high refractive index difference; low loss; low temperature processes; mode matching technology; monolithic integration; photonic/electronic circuits; plasma CVD; singlemode optical waveguide;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930749
Filename :
220845
Link To Document :
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