DocumentCode
915697
Title
Evaluation of an approximated doping profile for diffused junctions from capacitance measurements
Author
Calzolari, P.U. ; Graffi, S.
Author_Institution
UniversitÃ\xa0 di Bologna, Istituto di Elettronica FacoltÃ\xa0 di Ingegneria, Bologna, Italy
Volume
7
Issue
26
fYear
1971
Firstpage
772
Lastpage
774
Abstract
The differential-capacitance technique for the evaluation of doping profiles of the low-doped side of strongly asymmetrical p-n junctions may be extended to diffused junctions, provided that the actual profile is approximated by an exponential function. An easy fit between experimental and theoretical curves allows evaluation of the two parameters of the exponential approximation.
Keywords
capacitance measurement; diffusion; p-n junctions; semiconductor doping; asymmetrical p-n junctions; differential capacitance technique; diffused junctions; doping profiles; exponential functions;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19710527
Filename
4235435
Link To Document