DocumentCode :
9157
Title :
Stability Analysis in CNTFETs
Author :
Haji-Nasiri, S. ; Moravvej-Farshi, Mohammad Kazem
Author_Institution :
Adv. Devices Simulation Lab., Tarbiat Modares, Tehran, Iran
Volume :
34
Issue :
2
fYear :
2013
fDate :
Feb. 2013
Firstpage :
301
Lastpage :
303
Abstract :
We present a Nyquist stability criterion, together with step time responses, for the small-signal equivalent circuit model of common-source-configured carbon-nanotube (CNT) field-effect transistors (CNTFETs) made of 100 CNTs at 10-nm pitch as well as single CNTs, for the first time. In this analysis considering tube-to-tube variations in CNTs´ diameters, dependence of the degree of relative stability on CNT dimensions is acquired. Simulations show that the step responses for both types of CNTFETs, unlike those for CNT/GNR-based local interconnects, pose multiharmonic oscillations. Amplification of such harmonics by CNTFET can cause instability.
Keywords :
Nyquist stability; carbon nanotubes; field effect transistors; CNT-GNR-based local interconnects; CNTFET; Nyquist stability criterion; common-source-conhgured carbon-nanotube held-effect transistors; pose multiharmonic oscillations; small-signal equivalent circuit model; stability analysis; tube-to-tube variations; CNTFETs; Carbon nanotubes; Circuit stability; Integrated circuit interconnections; Stability criteria; Carbon-nanotube (CNT) field-effect transistors (CNTFETs); Nyquist stability; time responses;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2235136
Filename :
6410340
Link To Document :
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