DocumentCode
915804
Title
A semiconductor-ferroelectric memory device
Author
Sawyer, D.E. ; Sandstrom, D.B.
Volume
59
Issue
1
fYear
1971
Firstpage
87
Lastpage
88
Abstract
The development of monolithic, optically written, and electrically read memory elements employing single-crystal barium titanate is described. Both single and multiple-unit structures have been made. These structures can be fabricated using techniques similar to those employed in integrated circuits.
Keywords
Capacitors; Delay effects; Electrodes; Equivalent circuits; Ferroelectric materials; Optical sensors; Optical surface waves; Schottky diodes; Semiconductivity; Temperature;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1971.8097
Filename
1450027
Link To Document