InGaP/GaAs/InGaAs δ-doped p-channel field-effect transistor with p+/n+/p camel-like gate structure

A new InGaP/GaAs/InGaAs camel-like gate field-effect transistor with a delta-doped p-channel is investigated. Owing to the p-n depletion of the camel-like gate structure, the considerable conduction band discontinuity at the p-GaAs/i-InGaAs heterojunction, and the confinement effect for holes in the InGaAs quantum well, simultaneously, a large gate turn-on voltage up to 2.3 V is obtained. Experimental results exhibit a maximum extrinsic transconductance of 34 mS/mm and a saturation current density of 233 mA/mm. An extremely broad gate voltage swing greater than 6 V with above 80 maximum transconductance is achieved. The f _t and f _max are of 3.2 and 6.7 GHz, respectively.