• DocumentCode
    915976
  • Title

    Modified bipolar-phototransistor structure

  • Author

    Holmes, F.E. ; Salama, C.A.T.

  • Author_Institution
    University of Toronto, Department of Electrical Engineering, Toronto, Canada
  • Volume
    8
  • Issue
    2
  • fYear
    1972
  • Firstpage
    23
  • Lastpage
    24
  • Abstract
    A modified bipolar-phototransistor structure suitable for use in large imaging arrays is described. The structure exhibits an improved capacitance ratio and reduced dark current. Despite a reduced spectral sensitivity, the proposed device has performance advantages compared with those of the standard phototransistor when used in the charge-storage mode.
  • Keywords
    bipolar transistors; phototransistors; capacitance ratio; dark current; large imaging arrays; spectral sensitivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720019
  • Filename
    4235463
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=915976