Title :
X and Ku band GaAs m.e.s.f.e.t.
Author :
Baechtold, W. ; Walter, W. ; Wolf, Philip
Author_Institution :
IBM Zurich Research Laboratory, Rÿschlikon, Switzerland
Abstract :
A GaAs Schottky-barrier f.e.t. (m.e.s.f.e.t.) with a 1 ¿m gate has been built, which is suitable for X band and Ku band applications. The unilateral power gain over the X band is above 9 dB and the noise figure is only 5 dB at 10 GHz.
Keywords :
field effect transistors; microwave devices; noise; GaAs Schottky barrier; Ku band; MESFET; X-band; noise figure; unilateral power gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720027
