10-Gb/s modulator drivers with local feedback networks

Author

Li, Day-Uei ; Tsai, Chia-Ming

Author_Institution

Ind. Technol. Res. Inst., Taiwan

Volume

41

Issue

5

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

1025

Lastpage

1030

Abstract

A novel intrinsic collector-base capacitance (C_CB) feedback network (ICBCFN) was incorporated into the conventional cascode and series-connected voltage balancing (SCVB) circuit configurations to implement 10-Gb/s modulator drivers. The drivers fabricated in 0.35-μm SiGe BiCMOS process could generate 9 V_PP differential output swings with rise/fall time of less than 29 ps. Also, the ICBCFN was modified as an intrinsic drain-gate capacitance feedback network (IDGCFN) to implement drivers with differential output swing of 8 V_PP in 0.18-μm CMOS process. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than that of the currently reported silicon-based drivers.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; circuit feedback; driver circuits; modulators; 0.18 micron; 0.35 micron; 0.6 W; 10 Gbit/s; 8 V; 9 V; BiCMOS process; ICBCFN; IDGCFN; SiGe; conventional cascode; intrinsic collector-base capacitance feedback network; intrinsic drain-gate capacitance feedback network; laser drivers; local feedback networks; modulator drivers; series-connected voltage balancing; BiCMOS integrated circuits; CMOS process; Capacitance; Driver circuits; Energy consumption; Feedback circuits; Germanium silicon alloys; Output feedback; Silicon germanium; Voltage; 10 Gb/s; Intrinsic collector-base capacitance; intrinsic drain-gate capacitance; laser drivers; modulator drivers; silicon-based;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2006.872878

Filename

1624391