• DocumentCode
    916485
  • Title

    An amorphous semiconductor RF switch

  • Author

    Stone, J.L. ; Porter, W.A. ; Linder, J.S. ; Haden, C.R.

  • Volume
    59
  • Issue
    2
  • fYear
    1971
  • Firstpage
    323
  • Lastpage
    324
  • Abstract
    Switching of an RF signal at 300 MHz by an amorphous semiconductor is reported. The material is Si3Ge4As38Te55, cut into a 1 mm3sample. Switching is accomplished by application of a 300-V pulse, with switching times less than 1 µs observed.
  • Keywords
    Amorphous semiconductors; Bandwidth; Cameras; Conducting materials; Filters; Image color analysis; Optical modulation; Radio frequency; Switches; TV;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1971.8165
  • Filename
    1450095
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=916485