Title :
Resonant-cap structures for IMPATT diodes
Author :
Groves, I.S. ; Lewis, Donald E.
Author_Institution :
Post Office Research Department, Ipswich, UK
Abstract :
A series of measurements at 10 GHz giving the performance of IMPATT diodes obtained when varying the parameters of a cap circuit are presented. The results indicate that, with correctly chosen parameters, the circuit is suitable for operation over a 40% bandwidth.
Keywords :
IMPATT diodes; microwave devices; resonators; 10 GHz; IMPATT diodes; cap circuit; resonators; waveguide components;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720071
