DocumentCode
916563
Title
Concentration dependent diffusion of arsenic in silicon
Author
Kennedy, D.P. ; Murley, P.C.
Volume
59
Issue
2
fYear
1971
Firstpage
335
Lastpage
336
Abstract
Boltzmann-Matano analysis techniques have been applied to experimentally measured impurity atom distributions arising from arsenic diffusion into silicon. Inferred from this analysis is a concentration dependent diffusion coefficient at large arsenic concentrations. In addition, by comparing theory with experiment an estimate is given for the intrinsic diffusivity of arsenic in silicon.
Keywords
Atomic measurements; Bipolar transistors; Differential equations; Diffusion processes; Mathematical model; Scattering; Semiconductor impurities; Silicon; Smoothing methods; Temperature distribution;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1971.8172
Filename
1450102
Link To Document