Title :
Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si/sub 1-x/Ge/sub x/ epitaxial layers
Author :
Kamins, Theodore I. ; Nauka, K. ; Jacowitz, R.D. ; HOyt, Judy L. ; Noble, D.B. ; Gibbons, J.F.
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
fDate :
4/1/1992 12:00:00 AM
Abstract :
The characteristics of diodes fabricated in thick Si/sub 1-x/Ge/sub x/ layers formed by selective epitaxial deposition have been examined by DC electrical measurements, transmission electron microscopy, and X-ray topography. Because depositing in restricted areas limits the propagation of misfit dislocations in thick layers, a lower misfit dislocation density is found in small-area deposited regions. Similarly, diodes fabricated in small deposited regions have more ideal forward characteristics than diodes fabricated in large regions.<>
Keywords :
Ge-Si alloys; X-ray diffraction examination of materials; dislocation density; elemental semiconductors; semiconductor diodes; semiconductor epitaxial layers; semiconductor growth; silicon; transmission electron microscope examination of materials; vapour phase epitaxial growth; CVD growth; DC electrical measurements; Si-Si/sub 1-x/Ge/sub x/ thick layers; X-ray topography; diodes; forward characteristics; misfit dislocation density; selective epitaxial deposition; structural properties; transmission electron microscopy; Bipolar transistors; Electric variables measurement; Epitaxial layers; Heterojunctions; Microscopy; Rapid thermal processing; Semiconductor diodes; Silicon; Surfaces; Thickness measurement;
Journal_Title :
Electron Device Letters, IEEE
