• DocumentCode
    917243
  • Title

    New time-of-flight technique for measuring drift velocity in semiconductors

  • Author

    Evans, A.G.R. ; Robson, P.N. ; Stubbs, M.G.

  • Author_Institution
    University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
  • Volume
    8
  • Issue
    8
  • fYear
    1972
  • Firstpage
    195
  • Lastpage
    196
  • Abstract
    A microwave time-of-flight method for measuring the v/E characteristic of semiconductors is described. Results taken on a sample of gallium arsenide, using this technique, are shown to be in good agreement with those obtained from the same sample by the more conventional time-of-flight method.
  • Keywords
    characteristics measurement; electron mobility; microwave measurement; semiconductor materials testing; Schottky barrier contact; drift velocity; electron mobility; gallium arsenide; high resistivity; microwave measurements; p-n junction; semiconductor materials testing; time of flight techniques; v/E characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19720142
  • Filename
    4235592
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=917243