• DocumentCode
    918265
  • Title

    Influence of carrier velocity saturation in the unswept layer on the efficiency of avalanche transit time diodes

  • Author

    van Iperen, B.B. ; Tjassens, H.

  • Volume
    59
  • Issue
    6
  • fYear
    1971
  • fDate
    6/1/1971 12:00:00 AM
  • Firstpage
    1032
  • Lastpage
    1033
  • Abstract
    Due to velocity saturation of the carriers, the series resistance caused by the unswept layer in avalanche transit time diodes increases with increasing ac voltage on the diode. In GE npp+diodes this effect is found to influence the efficiency considerably and the same may be true for Si npp+diodes.
  • Keywords
    Conductivity; Current measurement; Electric fields; Gallium arsenide; Gunn devices; Lattices; Schottky diodes; Steady-state; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1971.8323
  • Filename
    1450253
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=918265