Title :
Microwave avalanche diodes
Author :
Sze, Simon M. ; Ryder, Robert M.
Author_Institution :
Bell Telephone Laboratories Inc., Murray Hill, N. J.
Abstract :
Microwave avalanche diodes of various types (IMPATT, TRAPATT, etc.) can generate power sufficient for microwave receivers and some transmitters. This brief review summarizes mechanisms of operation, power output, efficiency, noise, and some important features of design and fabrication.
Keywords :
Electron mobility; Fabrication; Frequency; Microwave generation; Plasma temperature; Power generation; Semiconductor diodes; Space charge; Transmitters; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1971.8360
