Title :
Surface-state density at the (hydrogen-chloride) oxide-silicon interface
Author :
Severi, M. ; Soncini, G.
Author_Institution :
CNR, Laboratorio di Chimica e Tecnologia dei Materiali e dei Componenti per l´Elettronica, Bologna, Italy
Abstract :
The addition of small amounts of gaseous hydrogen chloride into the dry-oxygen-gas stream during thermal oxidation has been found to reduce by one order of magnitude the surface-state density at the silicon-dioxide-silicon interface. Effects of silicon orientation, low-temperature annealing and hydrogen-chloride concentration within the oxidising atmosphere have been investigated by using the quasistatic technique.
Keywords :
metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; oxidation; semiconductor-insulator boundaries; surface electron states; hydrogen chloride concentration; low temperature annealing; quasistatic technique; silicon dioxide silicon interface; silicon orientation effects; surface state density; thermal oxidation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720293
