$\hbox {HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

A novel method of fabricating HfO_x-based resistive memory device with excellent nonvolatile characteristics is proposed. By using a thin AlCu layer as the reactive buffer layer into the anodic side of a capacitor-like memory cell, excellent memory performances, which include reliable programming/erasing endurance (> 10⁵ cycles), robust data retention at high temperature, and fast operation speed (< 50 ns), have been demonstrated. The resistive memory based on AlCu/HfO_x stacked layer in this letter shows promising application in the next generation of nonvolatile memory.