Title :
X-band GaAs diffused IMPATT diodes for high efficiency
Author :
Mircea, A. ; Farrayre, A. ; Kramer, B.
Abstract :
The technology and electrical operation of GaAs X-band IMPATT diodes is described. CW efficiencies of 15.5 percent at 8 GHz and 15.1 percent at 9 GHz were obtained. The characterization measurements indicate that the internal efficiency of the devices may be considerably higher.
Keywords :
Current density; Diodes; Electric breakdown; Electric resistance; Electrical resistance measurement; Frequency; Gallium arsenide; Power generation; Power measurement; Thermal resistance;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1971.8434
