DocumentCode :
919778
Title :
An Efficiency-Enhanced CMOS Rectifier With Unbalanced-Biased Comparators for Transcutaneous-Powered High-Current Implants
Author :
Guo, Song ; Lee, Hoi
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX
Volume :
44
Issue :
6
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
1796
Lastpage :
1804
Abstract :
This paper presents an efficiency-enhanced integrated full-wave CMOS rectifier for the transcutaneous power transmission in high-current biomedical implants. The comparator-controlled switches are developed to minimize the voltage drop along the conducting path while achieving the unidirectional current flow. The proposed unbalanced-biasing scheme also minimizes the reverse leakage current of the rectifier under different input amplitudes, thereby optimizing the rectifier power efficiency. Moreover, the proposed rectifier is able to self start and operates at low input amplitudes. Implemented in a standard 0.35 mum CMOS process with maximum threshold voltages of |Vthp| = 0.82 V and Vthn = 0.69 V, the rectifier can source a maximum output current of 20 mA and operate properly with inputs of different amplitudes and frequencies. With a 1.5 MHz input of 1.2 V amplitude, the proposed rectifier can achieve the peak voltage conversion ratio of 95% and the power efficiency of at least 82%.
Keywords :
CMOS integrated circuits; electric potential; leakage currents; power transmission; rectifiers; comparator-controlled switches; high-current biomedical implants; integrated full-wave CMOS rectifier; reverse leakage current; transcutaneous power transmission; transcutaneous-powered high-current implants; unbalanced-biased comparators; unbalanced-biasing scheme; unidirectional current flow; voltage drop; CMOS process; Cochlear implants; Frequency; Leakage current; Power transistors; Power transmission; Rectifiers; Regulators; Switches; Voltage; Comparator-controlled switches; implants; rectifier; transcutaneous power transmission; unbalanced-biasing scheme;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2009.2020195
Filename :
4982869
Link To Document :
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