Title :
Accumulation transit mode in transferred-electron oscillators
Author :
Jones, David ; Rees, H.D.
Author_Institution :
Royal Radar Establishment, Great Malvern, UK
Abstract :
Computer simulations have been used to analyse device characteristics appropriate to an accumulation-layer transit mode. Data for GaAs, previously attributed to the limited-space-charge-accumulation mode, and for indium phosphide, are identified with accumulation transit oscillations.
Keywords :
Gunn oscillators; computer aided analysis; electronics applications of computers; gallium arsenide; indium compounds; simulation; solid-state microwave devices; transferred electron devices; 35 to 40 GHZ; GaAs; Gunn oscillators; InP; accumulation transit mode; computer simulation; microwave oscillators; transferred electron devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720411
