DocumentCode
920179
Title
Band-to-band auger recombination and carrier-carrier scattering in power rectifiers
Author
Nilsson, N.G.
Author_Institution
Royal Institute of Technology, Physics Department III, Stockholm, Sweden
Volume
8
Issue
23
fYear
1972
Firstpage
580
Lastpage
582
Abstract
It is shown that band-to-band Auger recombination has a profound influence on the carrier-concentration profile and on the forward characteristic of p-s-n rectifiers (and thyristors) at high current densities, particularly when the diffusivity is decreased at high carrier concentrations by carrier-carrier scattering.
Keywords
Auger effect; carrier density; electron-hole recombination; solid-state rectifiers; thyristors; Auger effect; carrier concentration profile; carrier density; electron hole recombination; forward characteristic; power rectifiers; solid state rectifiers; thyristors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19720421
Filename
4235886
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