Title :
Effect of contact resistance on Gunn-diode risetimes
Author :
Edwards, D. ; Kellett, G. ; Turner, P. ; Myers, F.
Author_Institution :
Plessey Co., Allen Clark Research Centre, Towcester, UK
Abstract :
It is shown that the dominant mechanism limiting the risetime of pulsed Gunn-effect oscillators is a parasitic resistance within the device. If this resistance is reduced by careful control of the contact metallisation, or alternatively by the use of n+ contacts, risetimes of 1 ns or less can be obtained. The cavity parameters are shown to have a 2nd-order effect only.
Keywords :
Gunn diodes; Gunn oscillators; contact resistance; delays; Gunn diode risetimes; contact resistance effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19720432
