• DocumentCode
    920666
  • Title

    Small-signal noise analysis of p+--n--p+ BARITT diodes

  • Author

    Sj¿¿lund, A.

  • Author_Institution
    Microwave Institute Foundation, Stockholm, Sweden
  • Volume
    9
  • Issue
    1
  • fYear
    1973
  • Firstpage
    2
  • Lastpage
    4
  • Abstract
    The noise sources in BARITT diodes are described. The noise measure is calculated numerically and compared with experimental results. The optimum noise measure at 8 GHz was determined by varying the device width for given current density and doping density. The best noise measure of 9 dB was obtained for a doping of 2.5 x 1015/cm3 and a current density of 60 A/cm2.
  • Keywords
    noise; solid-state microwave devices; transit time devices; 8 GHz; BARITT diodes; noise; p-n-p junction; small signal analysis; solid state microwave devices; transit time devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730002
  • Filename
    4235936