DocumentCode
920666
Title
Small-signal noise analysis of p+--n--p+ BARITT diodes
Author
Sj¿¿lund, A.
Author_Institution
Microwave Institute Foundation, Stockholm, Sweden
Volume
9
Issue
1
fYear
1973
Firstpage
2
Lastpage
4
Abstract
The noise sources in BARITT diodes are described. The noise measure is calculated numerically and compared with experimental results. The optimum noise measure at 8 GHz was determined by varying the device width for given current density and doping density. The best noise measure of 9 dB was obtained for a doping of 2.5 x 1015/cm3 and a current density of 60 A/cm2.
Keywords
noise; solid-state microwave devices; transit time devices; 8 GHz; BARITT diodes; noise; p-n-p junction; small signal analysis; solid state microwave devices; transit time devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730002
Filename
4235936
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