Title :
Low-field tunnelling current in thin-oxide m.n.o.s. memory transistors
Author :
Maes, Hannes ; Van Overstraeten, R.
Author_Institution :
Instituut voor Elektrotechniek, Fysica en Elektronica von de Halfgeleiders, Heverlee, Belgium
Abstract :
An expression for the tunnelling current between the silicon bands and the traps located in the silicon nitride, in thin-oxide m.n.o.s. memory transistors under low-field conditions, is derived. The theoretical results are compared with available experimental data, and the parameters for the trap distribution are calculated. The agreement with experimental results is satisfactory.
Keywords :
electron traps; field effect transistors; metal-insulator-semiconductor devices; semiconductor storage devices; tunnelling; low field tunnelling current; thin oxide MNOS memory transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730014
