DocumentCode
920909
Title
Low-noise wideband indium-phosphide transferred-electron amplifiers
Author
Braddock, P.W. ; Gray, K.W.
Author_Institution
Royal Radar Establishment, Great Malvern, UK
Volume
9
Issue
2
fYear
1973
Firstpage
36
Lastpage
37
Abstract
X band pulsed, InP transferred-electron reflection amplifiers have been characterised by a study of the small-signal admittance, the large-signal dynamic conductance and the noise figure. These measurements have been made as functions of voltage, frequency and temperature on a number of different vapour epitaxial layers. The lowest observed noise figure was 8.8 dB at 10.0 GHz. An instantaneous bandwidth of more than 4 GHz at 7 dB gain has been obtained using a simple impedance-equalisation circuit.
Keywords
indium compounds; microwave amplifiers; noise; transferred electron devices; wideband amplifiers; 4 GHz; InP; X-band; impedance equalisation circuit; low noise; microwave amplifiers; transferred electron devices; wideband amplifiers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730025
Filename
4235960
Link To Document