DocumentCode :
920919
Title :
GaAs Power MESFET´s: Design, Fabrication, and Performance
Author :
Dilorenzo, J.V. ; Wisseman, William R.
Volume :
27
Issue :
5
fYear :
1979
fDate :
5/1/1979 12:00:00 AM
Firstpage :
367
Lastpage :
378
Abstract :
This paper reviews the state of the art of power GaAs MESFET´s. Items that will be covered are the operating principles of the device from a material and geometric point of view, the design, fabrication sequences, and material structures used by various laboratories, the factors identified as important to power by workers in the field the performance of the device in terms of frequency effects, power per unit gate-width effects, scaling from small to large gate-width devices, and voltage effects. In addition, the circuit applications of GaAs FET´s will be briefly discussed.
Keywords :
Circuit noise; Equivalent circuits; Fabrication; Frequency; Gallium arsenide; Instruments; MESFETs; Microwave FETs; Microwave devices; Voltage;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1979.1129635
Filename :
1129635
Link To Document :
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