DocumentCode :
920953
Title :
Common-Drain Flip-Chip GaAs FET Oscillators
Author :
Camisa, Raymond L. ; Sechi, Franco N.
Volume :
27
Issue :
5
fYear :
1979
fDate :
5/1/1979 12:00:00 AM
Firstpage :
391
Lastpage :
394
Abstract :
GaAs FET oscillators with flip-chip mounted devices in a novel common-drain configuration are described. It is shown how common-drain oscillators can achieve low thermal resistance while at the same time minimizing parasitics. It is also shown that broad-band negative resistances can be generated without external feedback elements. This paper also reports experimental results where output powers of 390 mW with 22-percent efficiency at 8.5 GHz and 230 mW with 26-percent efficiency at 11.7 GHz have been demonstrated.
Keywords :
Circuits; Electrons; FETs; Gallium arsenide; Microwave technology; Negative feedback; Oscillators; Power generation; Thermal management; Thermal resistance;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1979.1129638
Filename :
1129638
Link To Document :
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