• DocumentCode
    920990
  • Title

    The effect of diode parameters on GaAs diode mixers in the 40¿400 GHz range

  • Author

    Keen, N.J. ; van der Ziel, A. ; Schmidt, R.R.

  • Author_Institution
    Max-Planck-Institut fÿr Radioastronomie, Bonn, West Germany
  • Volume
    129
  • Issue
    3
  • fYear
    1982
  • fDate
    6/1/1982 12:00:00 AM
  • Firstpage
    99
  • Abstract
    Experimental measurements of noise temperature Tm and minimum conversion loss Lmin of a single-sideband Schottky-barrier diode mixer show the dependence: Tn = Tn0 (1 + f2/f20) and (Lmin0 ¿ 1) = (Lmin0 ¿ 1) (1 + f2/f20), where f0 = 110 GHz. It is demonstrated that these results can be interpreted in terms of the effect of diode parameters on the mixing process.
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; electron device noise; mixers (circuits); solid-state microwave circuits; 40 GHz to 400 GHz; GaAs; III-V semiconductors; MM-waves; Q-band; Schottky-barrier diode mixer; V-band; diode parameters; minimum conversion loss; noise temperature; single-sideband;
  • fLanguage
    English
  • Journal_Title
    Microwaves, Optics and Antennas, IEE Proceedings H
  • Publisher
    iet
  • ISSN
    0143-7097
  • Type

    jour

  • DOI
    10.1049/ip-h-1:19820022
  • Filename
    4645298
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=920990