• DocumentCode
    920998
  • Title

    Charge-coupled devices with submicron electrode separations

  • Author

    Baker, I.M. ; Beynon, J.D.E. ; Copeland, M.A.

  • Author_Institution
    University of Southampton, Department of Electronics, Southampton, UK
  • Volume
    9
  • Issue
    3
  • fYear
    1973
  • Firstpage
    48
  • Lastpage
    49
  • Abstract
    A technique is described for fabricating a 2-phase charge-coupled structure in which the electrodes are separated by only 0.1¿0.3 ¿m. Stringent photolithographic processing is not required for producing the submicron gaps.
  • Keywords
    field effect devices; semiconductor device manufacture; FET; photolithographic processing; semiconductor device manufacture; submicron electrode separations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730034
  • Filename
    4235970
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=920998