Title :
F.E.T. theory of strip-coupled Rayleigh-wave amplifier
Author_Institution :
Stanford University, Microwave Laboratory, Stanford, USA
Abstract :
It is shown that information can be transferred from one strip to another across a finite gap in which the carrier wave is subject to rapid decay. Each region in which a metal strip is located above the semiconductor, and insulated from it, is treated as an individual f.e.t. amplifier, exciting in the semiconductor a conduction current which flows into the adjacent similar region. Hence the carrier-wave decay between strips is unimportant. The effect of substituting ohmic contacts for the insulated `gates¿ is discussed as an extension of this theory.
Keywords :
Rayleigh waves; acoustic surface wave devices; field effect transistors; high-frequency amplifiers; Rayleigh waves; acoustic surface wave devices; field effect transistors; high frequency amplifiers; metal strip; ohmic contacts;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730037
