DocumentCode
921031
Title
Progress with CW IMPATT Diode Circuits at Microwave Frequencies
Author
Gewartowski, James W.
Volume
27
Issue
5
fYear
1979
fDate
5/1/1979 12:00:00 AM
Firstpage
434
Lastpage
442
Abstract
Progress with CW operation of IMPATT diodes at frequencies up to 20 GHz is reviewed, with emphasis on their circuit applications. Noise properties, stability criteria, and relliability are discussed. Comparisons are made between flat-profile and modified-Read-profile diodes. Examples of oscillator and amplifier circuits are presented.
Keywords
Doping profiles; Gallium arsenide; Heat sinks; Impedance; Microwave circuits; Microwave frequencies; P-n junctions; Schottky diodes; Silicon; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1979.1129645
Filename
1129645
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