Title :
Measurement of admittance of Gunn diodes in passive and active regions of bias voltage
Author_Institution :
Philips Research Laboratories, Eindhoven, Netherlands
Abstract :
The transfer function of the microwave circuit to the diode chip is obtained for a Gunn diode by combining 10 GHz admittance measurements with the measurement of the low-frequency differential resistance, which is a function of the bias voltage. The transfer parameters thus found can be used to calculate the admittance of an oscillating diode.
Keywords :
Gunn diodes; admittance measurement; microwave measurement; solid-state microwave devices; transfer functions; 10 GHZ; Gunn diodes; admittance measurement; microwave measurements; solid state microwave devices; transfer functions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730042
