DocumentCode :
921091
Title :
Design and Performance of I-Band (8-10-GHz) TRAPATT Diodes and Amplifiers
Author :
Oxley, Christopher H. ; Howard, Anthony M. ; Purcell, Jeffrey J.
Volume :
27
Issue :
5
fYear :
1979
fDate :
5/1/1979 12:00:00 AM
Firstpage :
463
Lastpage :
471
Abstract :
The design and fabrication of I-band silicon TRAPATT diodes are described, and the results of both oscillator and amplifier measurements are presented. The paper includes details of the design and characterization of a cascaded three-stage TRAPATT amplifier.
Keywords :
Circuits; Doping profiles; Fabrication; High power amplifiers; Oscillators; Power amplifiers; Pulse amplifiers; Semiconductor diodes; Silicon; Substrates;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1979.1129650
Filename :
1129650
Link To Document :
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