VCSEL Based on InAs Quantum-Dashes With a Lasing Operation Over a 117-nm Wavelength Span

Author

Taleb, Fadia ; Levallois, C. ; Paranthoen, C. ; Gauthier, Jean-Paul ; Chevalier, N. ; Perrin, M. ; Leger, Y. ; De Sagazan, Olivier ; Le Corre, A.

Author_Institution

INSA, FOTON, Rennes, France

Volume

25

Issue

21

fYear

2013

fDate

Nov.1, 2013

Firstpage

2126

Lastpage

2128

Abstract

We report an InP based vertical cavity surface emitting laser (VCSEL) achieving a lasing operation between 1529 and 1646 nm. This optically-pumped VCSEL includes a wide-gain bandwidth active region based on InAs quantum dashes and wideband dielectric Bragg mirrors. Based on a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling thus to monitor the gain material bandwidth. We demonstrate a 117 nm continuous wavelength variation of the VCSEL emission, a consequence of the important and wide gain afforded by the use of optimized quantum dashes.

Keywords

III-V semiconductors; indium compounds; laser cavity resonators; laser mirrors; laser transitions; optical pumping; quantum dash lasers; surface emitting lasers; InP-InAs; indium arsenide quantum dashes; laser transitions; optically-pumped VCSEL; vertical cavity surface emitting laser; wavelength 117 nm; wavelength 1529 nm to 1646 nm; wedge microcavity design; wide-gain bandwidth active region; wideband dielectric Bragg mirrors; Cavity resonators; Indium phosphide; Measurement by laser beam; Optical pumping; Vertical cavity surface emitting lasers; Wavelength measurement; Quantum dash lasers; semiconductor lasers; vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2282084

Filename

6600784