DocumentCode :
921748
Title :
The effect of junction temperature on the output power of a silicon IMPATT diode
Author :
Chudobiak, W.J. ; Mckillican, R. ; Makios, V.
Volume :
60
Issue :
3
fYear :
1972
fDate :
3/1/1972 12:00:00 AM
Firstpage :
340
Lastpage :
341
Abstract :
The pronounced sensitivity of output-power/junction-temperature choracteristics for some silicon IMPATT diodes, which has been demonstrated by a number of authors, is shown to be related to the fact that the drift region of the epitaxial layer is not entirely punched through at lower junction temperatures. It is shown that a simple measurement of the static dVb/dT characteristic may be used to select diodes with power output characteristics that are relatively insensitive at a given frequency to junction temperature variations.
Keywords :
Diodes; Light scattering; Optical scattering; Physical optics; Power generation; Radar scattering; Rough surfaces; Silicon; Surface roughness; Temperature;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1972.8638
Filename :
1450568
Link To Document :
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