Title :
The effect of junction temperature on the output power of a silicon IMPATT diode
Author :
Chudobiak, W.J. ; Mckillican, R. ; Makios, V.
fDate :
3/1/1972 12:00:00 AM
Abstract :
The pronounced sensitivity of output-power/junction-temperature choracteristics for some silicon IMPATT diodes, which has been demonstrated by a number of authors, is shown to be related to the fact that the drift region of the epitaxial layer is not entirely punched through at lower junction temperatures. It is shown that a simple measurement of the static dVb/dT characteristic may be used to select diodes with power output characteristics that are relatively insensitive at a given frequency to junction temperature variations.
Keywords :
Diodes; Light scattering; Optical scattering; Physical optics; Power generation; Radar scattering; Rough surfaces; Silicon; Surface roughness; Temperature;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1972.8638